# SccsId = "@(#)maskdata 4.1 (TU-Delft) 07/24/90"
"c1x3m"        "1um, 3 metal N-well cmos process"
ps      1   1   1       0  0  1  1  1  0 "polysilicon"
in      1   2   1       0  0  4  1  4  0 "metal1"
co      0   3   1       0  0  0  1  8  0 "contact IN to OD/PS"
ins     1   4   1       0  0  6  5  5  0 "metal2"
cos     0   5   1       0  0  0  1  8  0 "contact INS to IN"
int     1   6   1       0  0  5  4  6  0 "metal3"
cot     0   7   1       0  0  7  1  8  0 "contact INT to INS"
nn      1   8   1       0  0  2  8  2  0 "N-channel implant"
pp      1   9   1       0  0  2  8  2  0 "P-channel implant"
xa      0  10   1       0  0  3  1  7  0 "P-type substrate contact"
xb      0  11   1       0  0  2  1  2  0 "N-type well contact"
od      1  12   1       0  0  2  1  2  0 "oxide definition"
nw      0  13   1       0  0  6  1  6  0 "N-well"
cb      0  14   1       0  0  4  2  8  0 "bonding contact"
te      0  15   1       0  0  4  2  8  0 "text layer"
sn      0  16   1       0  0  2  2  8  0 "text layer"
sp      0  17   1       0  0  3  2  8  0 "text layer"
sdi     0  18   1       0  0  4  2  8  0 "text layer"
bb      2   0   1       0  0  7  2  8  0 "bounding box"
